Posttime: 20 Aug, 2022 Views: 208 Author: Raza Akbar
What are the fundamentals of HBM?
Electronics firms all around the globe use electrostatic discharge testing to figure out how vulnerable their products are to ESD damage. The HBM is used in ESD simulations.
With the use of ESD simulation, it is possible to gauge the ESD resilience of electronic systems at their early stages of development. For a simulation chain to be complete and take into account the needs of all important parts, the models of those parts must be very accurate.
ESD Test Models
All modern semiconductor devices include built-in ESD safeguards. However, ESD testing is necessary to certify items to assure their efficacy and dependability in accordance with JEDEC regulations.
ESD testing typically uses one of three primary test models: the human body model (HBM), the charge device model (CDM), or the machine model (MM).
To ensure the efficiency and dependability of semiconductor devices, there are numerous well-established models that perform tests against ESD events. Primary ESD tests on the Human Body Model (HBM), Machine Model (MM), and Charged Device Model (CDM).
Figure: ESD simulator for IC testing
Human body model
Electronic devices’ vulnerabilities to harm from electrostatic discharges are often characterized using the Human Body Model (HBM) (ESD). Using this model, one may experience what it would be like to release a static charge by touching the pins of a grounded integrated circuit. The person can pick up this charge by walking on any surface that doesn’t conduct electricity, such as carpet, vinyl, or concrete.
The HBM is classified as an ESD event rather than an EOS event because of its charge transfer-related source and brief pulse duration. A model was developed to illustrate how a charged human being’s electrical discharge might react to a charged item or component.
The model begins with a human being as its starting point. A finger from the charged source is then used to contact a part or item.
When the charged person touches the charged part or item, current flows in both directions.
In the HBM integrated circuit stress method (reference terminal), Terminal A (the stressed terminal) and Terminal B (the rest of the pins) are assigned to different groups of integrated circuit pins in the HBM. Two stress pulses, one positive and one negative, are applied to each pin of the IC.
How To Solve HBM ESD Failures
Failures due to HBM ESD occur when the voltage at the gate of a transistor increases under HBM ESD stress to a level higher than the damage voltage of the gate’s thin oxide, causing the oxide to rupture and the transistor to fail. Any integrated circuit architecture that the ESD current flows through is at risk of damage. This includes contact structures. LISUN has the best simulators for IC testing.
HBM is applied between two pins of the IC. When a stress pulse is sent to the positive/negative pin of an integrated circuit and the pin is called the negative/positive pin, a stress current flows in the opposite direction.
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